14-12-2025
جامعة الملك عبدالعزيز
KING ABDULAZIZ UNIVERSITY
Faculty of Sciences
Document Details
Document Type
:
Article In Journal
Document Title
:
Electrical characterizations of SnPc/p-GaAs heterojunction
Electrical characterizations of SnPc/p-GaAs heterojunction
Subject
:
Physics
Document Language
:
English
Abstract
:
Current voltage and capacitance-voltage characteristics for SnPc thin film with ?105 nm thickness; deposited on p-GaAs single crystals have been investigated. The dark current voltage-characteristics of the prepared junction have been investigated in a temperature range from ∼303 to 393 K. The obtained results showed rectification behaviour. At low forward and reverse bias, the current was found to be limited by the thermoionic emission, while at high forward voltage, space charge limited current dominated by a single trap level of 0.22 eV. The analysis of the dark capacitance voltage characteristics indicated that the carrier concentration is 1.4 × 1014 cm -3 with a built in voltage ∼0.55 eV.© EDP Sciences.
ISSN
:
1286-0042
Journal Name
:
EPJ Applied Physics
Volume
:
46
Issue Number
:
2
Publishing Year
:
2009 AH
2009 AD
Article Type
:
Article
Added Date
:
Tuesday, October 13, 2009
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
عادل صالح وعظ الدين فيده
Adel Saleh Faidah
Researcher
Doctorate
afaidah@kau.edu.sa
El-Nahass, M.M
El-Nahass, M.M
Researcher
Doctorate
Files
File Name
Type
Description
23408.pdf
pdf
Abstract
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